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Product Data Sheet
March 31, 2003
2.4 mm Discrete HFET
TGF4240-SCC
Key Features and Performance
* * * * * * * 2400 m x 0.5 m HFET Nominal Pout of 31.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 56 % at 8.5 GHz Frequency Range: DC - 12 GHz Suitable for high reliability applications 0.6 x 1.0 x 0.1 mm (0.024 x 0.040 x 0.004 in)
Primary Applications
* * * Cellular Base Stations High-reliability space Military
DESCRIPTION The TriQuint TGF4240-SCC is a single gate 2.4 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Typical performance at 8.5 GHz is 31.5 dBm power output, 10 dB Gain, and 56% PAE. Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes. The TGF4240-SCC is readily assembled using automatic equipment.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
March 31, 2003
TGF4240-SCC
TABLE I MAXIMUM RATINGS SYMBOL
VDS VGS PD TCH TSTG TM
PARAMETER 1/
Drain to Source Voltage Gate to Source Voltage Range Power Dissipation Operating Channel Temperature Storage Temperature Mounting Temperature (30 seconds)
VALUE
12 V 0 to -5.0 Volts TBD 150C -65 to 200C 320C
NOTES
2/ 3/, 4/
1/ These ratings represent the maximum values for this device. Stresses beyond those listed under "Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "DC Probe Characteristics" is not implied. Exposure to maximum rated conditions for extended periods may affect device reliability. 2/ When operated at this bias condition with a base plate temperature of 70 0C, the median life is reduced from TBD to TBD hours. 3/ Junction temperature will directly affect the device Mean Time to Failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels 4/ These ratings apply to each individual FET
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
March 31, 2003
TABLE II DC PROBE CHARACTERISTICS (TA = 25 C, Nominal) Symbol IDSS GM VP VBGS VBGD Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Minimum --1 17 17 Typical 588 396 1.85 22 22
TGF4240-SCC
Maximum --3 30 30
Unit mA mS V V V
Note 1/ 1/ 2/ 2/ 2/
1/ Total for two FETS 2/ VP, VBGS, and VBGD are negative.
TABLE III ELECTRICAL CHARACTERISTICS (TA = 25 C, Nominal) Bias Conditions: Vd = 8 V, Id = 100 mA Symbol Pout Gp PAE Parameter Output Power Power Gain Power Added Efficiency Typical 31.5 10 56 Unit dBm dB %
TABLE IV THERMAL INFORMATION* Parameter RqJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 8 V ID = 100 mA Pdiss = TBD TCH o ( C) TBD RqJC (C/W) TBD TM (HRS) TBD
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. * The thermal information is a result of a detailed thermal model.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
March 31, 2003
TGF4240-SCC
TYPICAL PERFORMANCE
Bias Conditions: Freq = 8.5 GHzm Vd = 8V, Id = 100mA (TA = 25 C, Nominal)
Gain - dB and Output Power - dBm
Input Power - dBm
Power Added Efficiency - %
Fax: (972)994 8504 Web: www.triquint.com
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Pout (dBm) Gain (dB) PAE (%)
TriQuint Semiconductor Texas : (972)994 8465
Product Data Sheet
March 31, 2003
TGF4240-SCC
Unmatched Modeled S-Parameter Data for the TGF4240-SCC
S11 FREQ (GHz)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0
S21 ANG () deg
-62.251 -100.759 -122.281 -135.190 -143.616 -149.505 -153.846 -157.179 -159.826 -161.984 -163.785 -165.317 -166.642 -167.805 -168.839 -169.769 -170.615 -171.390 -172.108 -172.776 -173.404 -173.996 -174.558 -175.093 -175.607 -176.100 -176.576 -177.036
S12 ANG () deg
144.748 122.599 109.317 100.360 93.616 88.120 83.392 79.175 75.316 71.723 68.337 65.118 62.039 59.080 56.227 53.470 50.801 48.214 45.704 43.267 40.901 38.603 36.371 34.202 32.095 30.048 28.060 26.131
S22 ANG () deg
56.129 36.651 25.761 19.133 14.702 11.520 9.118 7.243 5.750 4.553 3.595 2.843 2.275 1.876 1.639 1.559 1.634 1.866 2.256 2.807 3.521 4.403 5.454 6.679 8.076 9.646 11.386 13.288
MAG dB
-0.336 -0.642 -0.803 -0.881 -0.920 -0.940 -0.948 -0.950 -0.948 -0.942 -0.934 -0.925 -0.914 -0.902 -0.890 -0.877 -0.863 -0.849 -0.835 -0.821 -0.807 -0.793 -0.779 -0.765 -0.751 -0.737 -0.724 -0.711
MAG dB
20.588 17.874 15.374 13.286 11.538 10.046 8.747 7.598 6.565 5.626 4.764 3.966 3.221 2.522 1.862 1.236 0.640 0.071 -0.475 -1.000 -1.506 -1.995 -2.468 -2.928 -3.374 -3.808 -4.232 -4.645
MAG dB
-31.032 -27.740 -26.741 -26.363 -26.216 -26.175 -26.194 -26.255 -26.343 -26.452 -26.580 -26.726 -26.886 -27.058 -27.242 -27.436 -27.639 -27.851 -28.068 -28.291 -28.515 -28.740 -28.964 -29.186 -29.401 -29.606 -29.800 -29.979
MAG dB
-13.423 -10.066 -8.938 -8.381 -8.008 -7.705 -7.428 -7.161 -6.898 -6.638 -6.381 -6.128 -5.879 -5.636 -5.400 -5.172 -4.951 -4.739 -4.535 -4.340 -4.154 -3.976 -3.807 -3.645 -3.491 -3.345 -3.206 -3.074
ANG () deg
-116.099 -135.107 -144.013 -148.390 -150.580 -151.636 -152.083 -152.203 -152.157 -152.041 -151.912 -151.804 -151.737 -151.720 -151.757 -151.850 -151.995 -152.191 -152.432 -152.714 -153.033 -153.385 -153.764 -154.169 -154.594 -155.037 -155.494 -155.964
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
March 31, 2003
TGF4240-SCC
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
March 31, 2003
TGF4240-SCC
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Die are shipped in gel pack unless otherwise specified.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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